Titre : | Design study of high-efficiency thermophotovoltaic solar vell | Type de document : | texte manuscrit | Auteurs : | Mohamed Ben Atallah, Auteur ; Ali Cheknane, Directeur de thèse | Editeur : | Laghouat : Université Amar Telidji - Département d'électronique | Année de publication : | 2020 | Importance : | 85p. | Format : | 30 cm. | Accompagnement : | +1 CD ROM Optique Némérique | Note générale : | dissertation master degree in microelectronic engineering | Langues : | Anglais | Mots-clés : | TPV cells (GaSb/ InGaAsSb /InAsSbP) thermophotovoltaic selective emitter | Résumé : | Our manuscript studies the characteristics of a new design of selective Metamaterial (MM) emitter for near-infrared wavelength range, after a brief overview of MMs foundation, operating mechanisms with state of the art of TPV technologies. MM absorber/emitter for TPV application has been numerically investigated for a wide-band absorption with a selective emittance, this study highlights the theories, properties, and applications of MM absorber/emitter, and their requirements for an efficient conversion such as polarizationinsensitive, wide-angle of incidence, thermal stability given by high melting temperature point of the used materials as SiO2 and Tungsten. A rigorous approach for simulation has been performed to understand the behavior of the new design at near-infrared and optical wavelength ranges, by using the HFSS solver based on the Finite Element Method (FEM). Absorption rates of 99% are numerically achieved covering a wide range from 120THz to 600THz. Finally, the suggested design has been exploited for the TPV system. The highest TPV conversion efficiency of 27% can be achieved by using two types of TPV cells (GaSb) and (InGaAsSb), for a high-temperature (2100°C), on the other hand, for low operating temperatures (e.g. TBB = 600ºC), furthermore, (InAsSbP) TPV cell associates to achieve 22.5% of TPV conversion efficiency. Therefore, the selected absorber/emitter design can operate at a wide temperature range from 600 to 2100 ºC. | note de thèses : | Memoire de Master en Electronique |
Design study of high-efficiency thermophotovoltaic solar vell [texte manuscrit] / Mohamed Ben Atallah, Auteur ; Ali Cheknane, Directeur de thèse . - Laghouat : Université Amar Telidji - Département d'électronique, 2020 . - 85p. ; 30 cm. + +1 CD ROM Optique Némérique. dissertation master degree in microelectronic engineering Langues : Anglais Mots-clés : | TPV cells (GaSb/ InGaAsSb /InAsSbP) thermophotovoltaic selective emitter | Résumé : | Our manuscript studies the characteristics of a new design of selective Metamaterial (MM) emitter for near-infrared wavelength range, after a brief overview of MMs foundation, operating mechanisms with state of the art of TPV technologies. MM absorber/emitter for TPV application has been numerically investigated for a wide-band absorption with a selective emittance, this study highlights the theories, properties, and applications of MM absorber/emitter, and their requirements for an efficient conversion such as polarizationinsensitive, wide-angle of incidence, thermal stability given by high melting temperature point of the used materials as SiO2 and Tungsten. A rigorous approach for simulation has been performed to understand the behavior of the new design at near-infrared and optical wavelength ranges, by using the HFSS solver based on the Finite Element Method (FEM). Absorption rates of 99% are numerically achieved covering a wide range from 120THz to 600THz. Finally, the suggested design has been exploited for the TPV system. The highest TPV conversion efficiency of 27% can be achieved by using two types of TPV cells (GaSb) and (InGaAsSb), for a high-temperature (2100°C), on the other hand, for low operating temperatures (e.g. TBB = 600ºC), furthermore, (InAsSbP) TPV cell associates to achieve 22.5% of TPV conversion efficiency. Therefore, the selected absorber/emitter design can operate at a wide temperature range from 600 to 2100 ºC. | note de thèses : | Memoire de Master en Electronique |
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