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[article] in COST > N° 18 [01/01/2017] . - p.56 | Titre : | Electrical parameters temperature characterization irradiated GaAsN Schottky Barrier Diodes | | Type de document : | texte imprimé | | Auteurs : | A. Teffahi, Auteur ; D. Hamri, Auteur ; A. Djeghlouf, Auteur ; M. Abboun Abida, Auteur | | Année de publication : | 2017 | | Article en page(s) : | p.56 | | Langues : | Anglais | | Mots-clés : | GaAsN Schottky diode Barrier height series resistance Richardson constant | | Résumé : | Temperature dependent transport parameters of irradiated GaAsN Schottky diodes are investigated in temperature range 110K-290K. Extracted parameters are barrier height, series resistance and Richardson constant. Average barrier heights were found to be 1.02(0.72) eV with standard deviation 0.161 (0.096) in 110K-210K and 210K-290K temperature ranges, respectively. Modified Richardson constant was estimated at 32.03 A/cm2K2. Results indicate an inhomogeneous interface with patches having a double Gaussian distribution ofbarrier heights. |
[article] Electrical parameters temperature characterization irradiated GaAsN Schottky Barrier Diodes [texte imprimé] / A. Teffahi, Auteur ; D. Hamri, Auteur ; A. Djeghlouf, Auteur ; M. Abboun Abida, Auteur . - 2017 . - p.56. Langues : Anglais in COST > N° 18 [01/01/2017] . - p.56 | Mots-clés : | GaAsN Schottky diode Barrier height series resistance Richardson constant | | Résumé : | Temperature dependent transport parameters of irradiated GaAsN Schottky diodes are investigated in temperature range 110K-290K. Extracted parameters are barrier height, series resistance and Richardson constant. Average barrier heights were found to be 1.02(0.72) eV with standard deviation 0.161 (0.096) in 110K-210K and 210K-290K temperature ranges, respectively. Modified Richardson constant was estimated at 32.03 A/cm2K2. Results indicate an inhomogeneous interface with patches having a double Gaussian distribution ofbarrier heights. |
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