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[article]
| Titre : |
Electrical parameters temperature characterization irradiated GaAsN Schottky Barrier Diodes |
| Type de document : |
texte imprimé |
| Auteurs : |
A. Teffahi, Auteur ; D. Hamri, Auteur ; A. Djeghlouf, Auteur ; M. Abboun Abida, Auteur |
| Année de publication : |
2017 |
| Article en page(s) : |
p.56 |
| Langues : |
Anglais (eng) |
| Mots-clés : |
GaAsN Schottky diode Barrier height series resistance Richardson constant |
| Résumé : |
Temperature dependent transport parameters of irradiated GaAsN Schottky diodes are investigated in temperature range 110K-290K. Extracted parameters are barrier height, series resistance and Richardson constant. Average barrier heights were found to be 1.02(0.72) eV with standard deviation 0.161 (0.096) in 110K-210K and 210K-290K temperature ranges, respectively. Modified Richardson constant was estimated at 32.03 A/cm2K2. Results indicate an inhomogeneous interface with patches having a double Gaussian distribution ofbarrier heights. |
in COST > N° 18 [01/01/2017] . - p.56
[article] Electrical parameters temperature characterization irradiated GaAsN Schottky Barrier Diodes [texte imprimé] / A. Teffahi, Auteur ; D. Hamri, Auteur ; A. Djeghlouf, Auteur ; M. Abboun Abida, Auteur . - 2017 . - p.56. Langues : Anglais ( eng) in COST > N° 18 [01/01/2017] . - p.56
| Mots-clés : |
GaAsN Schottky diode Barrier height series resistance Richardson constant |
| Résumé : |
Temperature dependent transport parameters of irradiated GaAsN Schottky diodes are investigated in temperature range 110K-290K. Extracted parameters are barrier height, series resistance and Richardson constant. Average barrier heights were found to be 1.02(0.72) eV with standard deviation 0.161 (0.096) in 110K-210K and 210K-290K temperature ranges, respectively. Modified Richardson constant was estimated at 32.03 A/cm2K2. Results indicate an inhomogeneous interface with patches having a double Gaussian distribution ofbarrier heights. |
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