Study of p-layer on the hydrogenated amorphous silicon HIT solar cells / W.L. Rahal in COST, N° 18 ([01/01/2017])

Public ISBD [article]  in COST > N° 18 [01/01/2017] . - p. 64 Titre : Study of p-layer on the hydrogenated amorphous silicon HIT solar cells Type de document : texte imprimé Auteurs : W.L. Rahal, Auteur ; H. Madani Yassaad, Auteur ; D. Rachid, Auteur Année de publication : 2017 Article en page(s) : p. 64 Langues : Anglais Mots-clés : Simulation  HIT solar cells  Doping density  Surface band bending  Potential barrier height  J(V) characteristics Résumé : In this article, we've studied the effect of p-layer doping density NA and surface band bending Esbb at the interface ITO/p-layer on the performance of heterojunction solar cell (ITO/p-a-S:H/i-pm-Si:H/n-c-Si/Al). Despite the deterioration ofp-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase ofp-layer doping density NA and contact barrier height фьо (Variation of the surface band bending Esbb) leads to an increase of the efficiency of HIT (heterojunction with intrinsic thin layer) solar cells. [article] Study of p-layer on the hydrogenated amorphous silicon HIT solar cells [texte imprimé] / W.L. Rahal, Auteur ; H. Madani Yassaad, Auteur ; D. Rachid, Auteur . - 2017 . - p. 64. Langues : Anglais in COST > N° 18 [01/01/2017] . - p. 64 Mots-clés : Simulation  HIT solar cells  Doping density  Surface band bending  Potential barrier height  J(V) characteristics Résumé : In this article, we've studied the effect of p-layer doping density NA and surface band bending Esbb at the interface ITO/p-layer on the performance of heterojunction solar cell (ITO/p-a-S:H/i-pm-Si:H/n-c-Si/Al). Despite the deterioration ofp-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase ofp-layer doping density NA and contact barrier height фьо (Variation of the surface band bending Esbb) leads to an increase of the efficiency of HIT (heterojunction with intrinsic thin layer) solar cells.

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